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 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
* High Safe Operating Area (100% Tested) 150 W @ 100 V * Completely Characterized for Linear Operation * High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8 A, 4 V VCE(sat) = 1.4 V (Max) @ IC = 8 A, IB = 0.8 A * For Low Distortion Complementary Designs
* Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.
Preferred devices are Motorola recommended choices for future use and best overall value.
Complementary Silicon Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
*MAXIMUM RATINGS
REV 7 Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C Derate above 25_C Base Current -- Continuous -- Peak (1) Collector Current -- Continuous -- Peak (1) Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Emitter Voltage Characteristic Rating
v 10%.
Symbol
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
VCEX
RJC
PD
IC
IB
- 65 to + 200
Value
150 0.855
1.17
Max
160
160
140
16 AMPERE COMPLEMENTARY POWER TRANSISTORS 140 VOLTS 150 WATTS
4 15
16 30
7
*Motorola Preferred Device
2N6609
2N3773*
Order this document by 2N3773/D
CASE 1-07 TO-204AA (TO-3)
NPN
PNP
Watts W/_C
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
Vdc
_C
1
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2N3773 2N6609
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle * Indicates JEDEC Registered Data. SECOND BREAKDOWN CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS (1)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
2
Second Breakdown Collector Current with Base Forward Biased t = 1 s (non-repetitive), VCE = 100 V, See Figure 12 *Small-Signal Current Gain (IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz) Magnitude of Common-Emitter Small-Signal, Short-Circuit, Forward Current Transfer Ratio (IC = 1 A, f = 50 kHz) *Base-Emitter On Voltage (IC = 8 Adc, VCE = 4 Vdc) Collector-Emitter Saturation Voltage *(IC = 8 Adc, IB = 800 mAdc) (IC = 16 Adc, IB = 3.2 Adc) DC Current Gain *(IC = 8 Adc, VCE = 4 Vdc) (IC = 16 Adc, VCE = 4 Vdc) *Emitter Cutoff Current (VBE = 7 Vdc, IC = 0) Collector Cutoff Current (VCB = 140 Vdc, IE = 0) *Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) *Collector Cutoff Current (VCE = 120 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (IC = 0.2 Adc, RBE = 100 Ohms) *Collector-Emitter Sustaining Voltage (IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms) *Collector-Emitter Breakdown Voltage (IC = 0.2 Adc, IB = 0) Characteristic
v 2%.
Motorola Bipolar Power Transistor Device Data
VCEO(sus) VCER(sus) VCEX(sus) VCE(sat) VBE(on) Symbol ICBO ICEO IEBO ICEX |hfe| hFE IS/b hfe Min 150 160 140 1.5 40 15 5 -- -- -- -- -- -- -- -- 4 Max 2.2 1.4 4 2 10 60 -- 10 -- -- -- -- -- -- 5 2 mAdc mAdc mAdc mAdc Unit Adc Vdc Vdc Vdc Vdc Vdc -- -- --
2N3773 2N6609
NPN
300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 0.3 VCE = 4 V 25C - 55C 150C hFE , DC CURRENT GAIN 300 200 25C 100 70 50 30 20 10 7.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 20 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 20 VCE = 4 V - 55C
PNP
150C
Figure 1. DC Current Gain
Figure 2. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0 IC = 4 A
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0 IC = 4 A IC = 16 A
1.6
1.6
1.2 IC = 8 A 0.8 IC = 16 A
1.2 IC = 8 A 0.8
0.4 TC = 25C 0 0.05 0.07 0.1
0.4 TC = 25C 0 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMPS)
2.0 3.0
0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMPS)
2.0 3.0
5.0
Figure 3. Collector Saturation Region
Figure 4. Collector Saturation Region
2.0 IC/IB = 10 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
2.0 IC/IB = 10 1.6
1.2 VBE(sat) 0.8 25C 150C VCE(sat) 0.5 0.7 1.0 2.0 3.0 150C 25C 5.0 7.0 10 20
1.2
VBE(sat) 25C 150C 150C 25C VCE(sat) 5.0 7.0
0.8
0.4
0.4
0 0.2 0.3
0.2 0.3
0.5 0.7 1.0
2.0 3.0
10
20
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 5. "On" Voltage
Figure 6. "On" Voltage
Motorola Bipolar Power Transistor Device Data
3
2N3773 2N6609
30 20 IC, COLLECTOR CURRENT (AMP) 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C, SINGLE PULSE SECOND BREAKDOWN LIMIT 500 ms dc 10 s 40 s 100 s 200 s 1.0 ms 100 ms
0.05 0.03 3.0
200 300 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 7 is based on T J(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 200_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
100 POWER DERATING FACTOR (%)
80
60 THERMAL DERATING
40
20
0
0
40
80 120 TC, CASE TEMPERATURE (C)
160
200
Figure 8. Power Derating
4
Motorola Bipolar Power Transistor Device Data
2N3773 2N6609
PACKAGE DIMENSIONS
A N C -T- E D U V
2 2 PL SEATING PLANE
K
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005) L G
1
TQ
M
Y
M
-Y-
H
B
-Q- 0.13 (0.005)
M
TY
M
DIM A B C D E G H K L N Q U V
INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188
MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
CASE 1-07 TO-204AA (TO-3) ISSUE Z
Motorola Bipolar Power Transistor Device Data
5
2N3773 2N6609
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
6
Motorola Bipolar Power Transistor Device Data
*2N3773/D*
2N3773/D


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